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可按硅相关标准参考信息

GB 9596-1988 电子元器件详细规范 2CW380~411型硅电压调整二极管(可供认证用)
简介:
信息:ICSCCS:L41 发布:1988-06-29 实施

DLA SMD-5962-89981 REV F-2007 硅单片,可调节正稳压器,线性微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L55 发布:2007-07-23 实施

DLA SMD-5962-98649 REV B-2007 微型电路,线型,可调节的正压低压差线性稳压器,单块硅
简介:This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.
信息:ICS:31.200 CCS:L55 发布:2007-01-09 实施

GB 9509-1988 电子元器件详细规范 3DA1514型硅NPN环境额定高频放大晶体管(可供认证用)
简介:
信息:ICSCCS:L42 发布:1988-06-28 实施

DLA SMD-5962-94615 REV A-2007 硅单片,装有三态输出,TTL可兼容输入的寄存的总线收发器的扫描测试设置,改进型氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-07-03 实施

DLA SMD-5962-87699 REV H-2007 高级CMOS数字微电路,TTL可兼容四2输入与非门,单片硅
简介:
信息:ICSCCS发布:2007 实施

GB 9525-1988 电子元器件详细规范 2CC21、2CC26型硅调谐变容二极管(可供认证用)
简介:
信息:ICSCCS:L41 发布:1988-06-28 实施

DLA SMD-5962-94616 REV A-2007 硅单片,装有三态输出,TTL可兼容输入的总线收发器及寄存器的扫描测试设置,改进型氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-05-30 实施

DLA SMD-5962-87661 REV F-2006 硅单块 16K X8比特紫外线消除式可程序化只读存储器,数字主存储器微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L55 发布:2006-09-29 实施

GB 9529-1988 电子元器件详细规范 2CC25、2CC30型硅频段转换变容二极管(可供认证用)
简介:
信息:ICSCCS:L41 发布:1988-06-28 实施

DLA SMD-5962-94618 REV A-2007 硅单片,装有正向三态输出,TTL可兼容输入的八位总线收发器,改进型氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-05-30 实施

DLA SMD-5962-87648 REV E-2006 硅单块 64K X8紫外线消除式可程序化只读存储器,,互补金属氧化物半导体,数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-09-11 实施

GB 9521-1988 电子元器件详细规范 3DD325型硅NPN 环境额定低频放大晶体管(可供认证用)
简介:
信息:ICSCCS:L42 发布:1988-06-28 实施

DLA SMD-5962-93186 REV B-2007 硅单片,装有三态输出,TTL可兼容输入的八位总线收发器的扫描测试设置,改进型氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-05-30 实施

DLA SMD-5962-90516 REV B-2006 硅单片,TTL可兼容输入,装有三态输出的八位D型边缘触发双稳态多谐振荡器,高速氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-08-24 实施

GB 9520-1988 电子元器件详细规范 3DD200型硅NPN低频放大用管壳额定双极型晶体管(可供认证用)
简介:
信息:ICSCCS:L42 发布:1988-06-28 实施

DLA SMD-5962-94586 REV A-2007 硅单片,装有三态输出,TTL可兼容输入的八位总线收发器及寄存器的扫描测试设置,改进型氧化物半导体双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or I dentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-05-03 实施

DLA SMD-5962-81016 REV F-2006 硅单片可预置二进制/十进制,降值计数器/升值计数器,氧化物半导体数字微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2006-08-24 实施

KS C IEC PAS 62257-10-2022 农村电气化用可再生能源和混合系统的建议.第10部分:硅太阳能组件目视检查指南
简介:
信息:ICS:27.160 CCS发布:2022-12-28 实施

DLA SMD-5962-06240 REV A-2007 硅单片装有TTL可兼容输入输出,有正相三态输出的奇偶发生器及奇偶校验器,耐辐射高级氧化物半导体数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:17.220.20 CCS:L85 发布:2007-04-17 实施

DLA SMD-5962-89950 REV A-2006 硅单片,TTL可兼容输入,装有同步复位清除键的双重负边缘触发型JK触发器,改进型肖脱基TTL,双极数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes M, Q,and B) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or dentifying Number (PIN).
信息:ICS:31.200 CCS:L56 发布:2006-07-19 实施

ASTM E2625-19 控制建筑物及拆卸活动的可吸入晶体硅的职业照射的标准程序
简介:
信息:ICS:13.040.30 CCS发布:2019-08-15 实施

DLA SMD-5962-90869 REV C-2007 硅单块 互补金属氧化物半导体64K X 8电压消除式可程序化只读存储器,数字主储存器微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-04-13 实施

DLA SMD-5962-86063 REV H-2006 硅单块 144比特(32KX8)紫外可擦拭程序262互补金属氧化物半导体,数字主存储器微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-07-17 实施

YY/T 1555.2-2018 硅凝胶填充乳房植入物专用要求 硅凝胶填充物性能要求 第2部分:可浸提物质限量要求
简介:
信息:ICS:11.040.30 CCS:C30 发布:2018-12-20 实施:2020-01-01

DLA SMD-5962-94510 REV A-2007 硅单片,紫外线可擦除可程序化逻辑阵列,氧化物半导体数字记忆微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-04-02 实施

DLA SMD-5962-87627 REV C-2006 硅单块 可锁的晶体管-晶体管逻辑电路兼容输入,八进制D型双稳态多谐振荡器触发电路,快速互补金属氧化物半导体,数字微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.080.01 CCS:L40 发布:2006-07-06 实施

ASTM E2625-09(2017) 控制建筑物及拆卸活动的可吸入晶体硅的职业照射的标准程序
简介:
信息:ICS:13.040.30 CCS发布:2017-11-01 实施

DLA SMD-5962-88634 REV F-2007 硅单片32K X 8电可擦可编程序只读存储器数字存储微电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L55 发布:2007-03-29 实施

DLA SMD-5962-90555 REV B-2006 硅单片,异步可单次编程式逻辑设置,高速氧化物半导体数字记忆微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2006-06-22 实施

IEC PAS 62257-10:2017 农村电气化用可再生能源和混合系统的建议.第10部分:硅太阳能组件目视检查指南
简介:
信息:ICS:27.160 CCS发布:2017-08-09 实施

DLA SMD-5962-89734 REV E-2007 硅单片,TTL可兼容输入,六角倒相器,改进型氧化物半导体数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are eflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-03-19 实施

DLA SMD-5962-91577 REV C-2006 硅单块 带直/交流,脉宽调制和可擦与可编程只读存储的8比特微型控制器,互补金属氧化物半导体,数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-06-15 实施

IEC PAS 62257-10-2017 农村电气化用可再生能源和混合系统的建议.第10部分:硅太阳能组件目视检查指南
简介:
信息:ICS:27.160 CCS发布:2017-08-09 实施

DLA SMD-5962-89664 REV B-2007 硅单片,可级联64 X 8先进先出式,氧化物半导体数字记忆微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2007-02-28 实施

DLA SMD-5962-91576 REV C-2006 硅单块 带8比特可擦与可编程只读存储的互补高性能金属氧化物半导体结构微控制器,数字微型电路
简介:This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V), and nontraditional performance environment (device class N). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device is appropriate for the application environment.
信息:ICS:31.200 CCS:L56 发布:2006-06-15 实施

GOST R 56127-2014 可再生电力工程. 太阳能发电工程. 太阳能电池. 晶体硅太阳能电池的数据表信息和产品数据
简介:
信息:ICS:27.160 CCS发布:2014 实施:2016-07-01

DLA SMD-5962-93144 REV B-2007 硅单片,紫外线可消除可程序化逻辑设置,氧化物半导体数字记忆微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V).
信息:ICS:31.200 CCS:L56 发布:2007-02-28 实施

DLA SMD-5962-89769 REV A-2006 硅单片,TTL可兼容输入,装有数据启动的八位D型双稳态多谐振荡器,高速氧化物半导体数字微型电路
简介:This drawing describes device equirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2006-06-15 实施

ASTM E2625-09 控制建筑物及拆卸活动的可吸入晶体硅的职业照射的标准程序
简介:
信息:ICS:13.040.30 CCS发布:2009-05-01 实施

DLA SMD-5962-89967 REV A-2007 硅单片,寄存的8K X 8位可程序化只读存储器,氧化物半导体数字记忆微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-02-21 实施

DLA SMD-5962-91542 REV E-2006 硅单块 8比特可擦可编程序只读存储器微控制器,互补金属氧化物半导体,数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-06-14 实施

DLA SMD-5962-07229 REV A-2008 单片硅正电压调节器可调节高压线性微电路
简介:
信息:ICSCCS发布:2008-09-17 实施

DLA SMD-5962-89817 REV C-2007 硅单片,32K X 8紫外线消除式可程序化只读存储器,氧化物半导体数字记忆微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2007-02-15 实施

DLA SMD-5962-92333 REV C-2006 硅单片,装有10位交流/直流比较时钟器的八位可擦可编程序只读存储器控制器,氧化物半导体数字微型电路
简介:This drawing documents three product assurance class levels consisting of high reliability (device classes Q andM), space application (device class V), and nontraditional performance environment (device class N). A choice of case outlinesand lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of RadiationHardness Assurance (RHA) levels is reflected in the PIN. For device class N, the user is cautioned to assure that the device isappropriate for the application environment.
信息:ICS:31.200 CCS:L56 发布:2006-06-14 实施

DLA SMD-5962-95587 REV B-2008 单片硅点可擦可编程逻辑装置CMOS数字存储器微电路
简介:
信息:ICSCCS发布:2008-07-16 实施

DLA SMD-5962-89484 REV A-2007 硅单片8K X 8位紫外线消除式可程序化只读存储器互补型金属氧化物半导体数字存储微电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L67 发布:2007-02-15 实施

DLA SMD-5962-87529 REV E-2006 硅单块 2K X8注册的紫外线消除式可程序化只读存储器,互补金属氧化物半导体,数字微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2006-06-12 实施

DLA SMD-5962-94761 REV B-2008 单片硅电气式可重写式逻辑编程设备,CMOS数字存储器微电子电路
简介:
信息:ICSCCS发布:2008-07-10 实施

DLA SMD-5962-89815 REV B-2007 硅单片,2K X 8寄存的紫外线消除式可程序化只读存储器,氧化物半导体数字记忆微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits inaccordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2007-02-13 实施

DLA SMD-5962-87515 REV B-2006 硅单块 8KX8紫外,电可擦可编程序只读存储器 数字主存储器微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits inaccordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L55 发布:2006-06-06 实施

DLA MIL-M-38510/325 D VALID NOTICE 1-2008 单片硅可串接式双稳态多谐振荡器型小功率肖特基晶体管逻辑双极数字式微电路
简介:
信息:ICSCCS发布:2008-07-01 实施

DLA SMD-5962-96796 REV D-2007 128K X 8-BIT带电的可消除编程只读器硅单片电路数字记忆微电路
简介:This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. Achoice of case outlines and lead finishes which are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.
信息:ICS:31.200 CCS:L55 发布:2007-02-05 实施

DLA SMD-5962-93056 REV B-2006 硅单片,8K X 8可重调静态随机存取存储器,氧化物半导体数字记忆微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-05-17 实施

DLA SMD-5962-88741 REV C-2008 单片硅八位可寻址锁存器改进的低功率肖特基TTL双极数字微电路
简介:
信息:ICSCCS发布:2008-04-01 实施

DLA SMD-5962-90831 REV A-2007 硅单块 互补金属氧化物半导体8K X 8比特记名诊断的可程序化只读存储器,数字主储存器微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2007-02-02 实施

DLA SMD-5962-90564 REV D-2006 硅单片,装有16千字节可消除式可程序化只读存储器的8位微型控制器,单片氧化物半导体数字微型电路
简介:This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits inaccordance with MIL-PRF-38535, appendix A.
信息:ICS:31.200 CCS:L56 发布:2006-05-17 实施

DLA SMD-5962-91545 REV F-2007 CMOS数字微电路存储器,紫外光可消除可编程逻辑阵列,单片硅
简介:
信息:ICSCCS发布:2007-08-03 实施

DLA SMD-5962-93141 REV A-2007 硅单片,TTL兼容输入,装有正向三态输出及奇偶发生器/校验器的9位可锁存收发器,改进型氧化物半导体数字微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are flected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:17.220.20 CCS:L85 发布:2007-02-01 实施

DLA SMD-5962-38267 REV H-2006 硅单片128千X8比特电压消除式可程序化只读存储器,氧化物半导体数字记忆微型电路
简介:This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
信息:ICS:31.200 CCS:L56 发布:2006-05-15 实施

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